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FIN-SHAPED FIELD-EFFECT TRANSISTOR WITH A GERMANIUM EPITAXIAL CAP AND A METHOD FOR FABRICATING THE SAME
FIN-SHAPED FIELD-EFFECT TRANSISTOR WITH A GERMANIUM EPITAXIAL CAP AND A METHOD FOR FABRICATING THE SAME
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机译:带锗表层的鳍形场效应晶体管及其制造方法
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摘要
A FinFET includes a fin-shaped structure, a gate structure, an epitaxial layer, an interlayer dielectric layer, an opening, a germanium cap and a contact plug. The fin-shaped structure is disposed on the substrate. The gate structure covers a portion of the fin-shaped structure. The epitaxial layer is disposed on the fin-shaped structure adjacent to the gate structure. The interlayer dielectric layer covers the gate structure and the epitaxial layer. The opening is in the interlayer dielectric layer. The germanium cap fills the bottom of the opening and has a germanium concentration in excess of 50 atomic %. The contact plug is disposed on the germanium cap in the opening.
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