SEMICONDUCTOR DEVICE COMPRISING PLANAR GATE AND TRENCH FIELD ELECTRODE STRUCTURE

摘要

An embodiment of a semiconductor device includes a transistor cell array having transistor cells in a semiconductor body. A planar gate structure is on the semiconductor body at a first side. Field electrode trenches extend into the semiconductor body from the first side. Each of the field electrode trenches includes a field electrode structure. A depth d of the field electrode trenches is greater than a maximum lateral dimension wmax of the field electrode trenches at the first side.