III-V FinFET CMOS with III-V and germanium-containing channel closely spaced

摘要

Closely spaced III-V compound semiconductor fins and germanium-containing semiconductor fins are provided by utilizing mandrel structures for III-V compound semiconductor material epitaxial growth and subsequent fin formation. Mandrel structures are formed on a semiconductor material stack that includes an uppermost layer of a relaxed germanium-containing material layer. A hard mask portion is formed on a pFET device region of the semiconductor material stack, and then recessed regions are provided in the relaxed germanium-containing material layer of the material stack semiconductor and in an nFET device region. An III-V compound semiconductor material plug is then formed in each recessed region. First sacrificial spacers are formed adjacent the sidewalls of each mandrel structures, and then each mandrel structure is removed. III-V compound semiconductor fins and germanium-containing semiconductor fins are then formed in the different device regions utilizing each first sacrificial spacer as an etch mask.