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Fabrication methods of conducting bridge random access memory (CBRAM) device structures
Fabrication methods of conducting bridge random access memory (CBRAM) device structures
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机译:进行桥接随机存取存储器(CBRAM)设备结构的制造方法
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摘要
A method of forming a conductive bridging memory cell can include forming an active electrode layer above a barrier layer formed on a lower conductive layer; forming at least one ion conductor layer over an active electrode layer; incorporating conductive ions into the ion conductor layer to create a switch memory layer that changes impedance in response to an electric field; and the active electrode layer is a source of conductive ions for the ion conductor, and the barrier layer substantially prevents a movement of conductive ions therethrough.
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