RESISTIVE MEMORY DEVICE, MEMORY SYSTEM INCLUDING SAME AND METHOD FOR READING DATA IN RESISTIVE MEMORY DEVICE

摘要

A resistive memory device comprises first and second resistive memory cells, a reference current generation unit, and first and second bit line sense amplifiers. The first and second resistive memory cells are connected to first and second bit lines, respectively. The reference current generation unit is connected to a first node and generates first and second reference currents to apply to the first node. The first bit line sense amplifier is connected to the first node and the first bit line, and senses first data stored in the first resistive memory cell based on a first sensing current which is generated based on the first and second reference currents. The second bit line sense amplifier is connected to the first node and the second bit line, and senses second data stored in the second resistive memory cell based on a second sensing current which is generated based on the first and second reference currents.;COPYRIGHT KIPO 2016