Memory core of resistive type memory device, resistive type memory device including the same and method of sensing data in resistive type memory device

摘要

The memory core of the resistive memory device includes at least one first resistive memory cell coupled to a bit line, at least one second resistive memory cell coupled to a complementary bit line, a first resistance-voltage converter, and a bit line sense amplifier. . The first resistance-voltage converter is coupled to the bit line in parallel with the first resistive memory cell at the first node, and converts the resistance value of the first resistive memory cell into a corresponding voltage based on a read column selection signal. The bit line sense amplifier is connected to a bit line at a first node, a complementary bit line at a second node, and senses and amplifies a voltage difference between a bit line and a complementary bit line in response to a detection control signal.