TUNNEL FIELD EFFECT TRANSISTOR HAVING LOW TURN-ON VOLTAGE

摘要

A tunnel field effect transistor comprises: a semiconductor substrate; a source region provided in the semiconductor substrate; a drain region provided in the semiconductor substrate; a channel region provided in the semiconductor substrate between the source region and the drain region; and a gate electrode provided on the semiconductor substrate above the channel region. The source region comprises a first region having a first conductivity type, a third region having a second conductivity type different from the first conductivity type, and a second region having an intrinsic conductivity type between the first region and the third region. Therefore, the tunnel field effect transistor can operate as an ultra-low power device.;COPYRIGHT KIPO 2016