首页> 外文会议>IEEE 04EX839; International Vacuum Electron Sources Conference(IVESC2004); 20040906-10; Beijing(CN) >High gate turn-on voltages of InGaP/InGaAs camel-gate n-and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD

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High gate turn-on voltages of InGaP/InGaAs camel-gate n-and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD

机译：通过低压MOCVD制备的InGaP / InGaAs骆驼形n型和p型沟道伪掺杂调制场效应晶体管的高栅极导通电压

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《IEEE 04EX839; International Vacuum Electron Sources Conference(IVESC2004); 20040906-10; Beijing(CN)》|2004年|368-370|共3页
会议地点 Beijing(CN)
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入库时间 2022-08-26 14:21:09

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1. Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages [J] . Jung-Hui Tsai, Tzu-Yen Weng, King-Poul Zhu Superlattices and microstructures . 2008,第2期

机译：具有高栅极导通电压的InGaP / InGaAs n和p沟道伪掺杂调制场效应晶体管的研究
2. InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor [J] . Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, Electronics Letters . 2003,第22期

机译：InGaP / InGaAs / GaAs骆驼栅p沟道伪非晶调制掺杂场效应晶体管
3. High performances of InGaP/InGaAs/GaAs pseudomorphic modulation- doped field effect transistors using camel-gate structure [J] . Jung-Hui Tsai, King-Poul Zhu, Shao-Yen Chiu, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2004,第5期

机译：使用骆驼栅结构的InGaP / InGaAs / GaAs伪变形调制掺杂场效应晶体管的高性能
4. High gate turn-on voltages of InGaP/InGaAs camel-gate n- and p-channel pseudomorphic modulation-doped field effect transistors prepared by low-pressure MOCVD [C] . Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, IEEE 04EX839; International Vacuum Electron Sources Conference(IVESC2004); 20040906-10; Beijing(CN) . 2004

机译：通过低压MOCVD制备的InGaP / InGaAs骆驼形n型和p型沟道伪掺杂调制场效应晶体管的高栅极导通电压
5. Raman spectroscopy and electrical transport in suspended carbon nanotube field effect transistors under applied bias and gate voltages. [D] . Bushmaker, Adam W. 2010

机译：在施加的偏压和栅极电压下，悬浮碳纳米管场效应晶体管中的拉曼光谱和电传输。
6. High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics [O] . Li-Fan Shen, SenPo Yip, Zai-xing Yang, -1

机译：具有溅射介电层的高性能包裹栅InGaAs纳米线场效应晶体管
7. Low turn-on voltage InGaP/GaAsSb/GaAs double HBTs grown by MOCVD [O] . Yang ES, Yan BP, Hsu CC, 2002

机译：通过mOCVD生长的低导通电压InGap / Gaassb / Gaas双HBT
8. Monolithically Integrated Planar Front-End Photoreceivers with 0.25 MicrometerGate Pseudomorphic In(0.60)Ga(0.40)As/In(0.52)Al(0.48)As/InP Modulation-Doped Field-Effect Transistors [R] . Lai, R., Bhattacharya, P. K., Pavlidis, D., 1991

机译：具有0.25微米栅极假晶入（0.60）Ga（0.40）as / In（0.52）al（0.48）as / Inp调制掺杂场效应晶体管的单片集成平面前端光接收器

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