/ DIELECTRIC/METAL BARRIER INTEGRATION TO PREVENT COPPER DIFFUSION

摘要

An interconnect structure for use in semiconductor devices and a method for fabricating the same are described. The method includes disposing a substrate in a vacuum processing chamber. The substrate has an exposed copper surface and an exposed low-k dielectric surface. A metal layer is formed on the copper surface, but not on the low-k dielectric surface. A metal-based dielectric layer is formed over the metal layer and the low-k dielectric layer.