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/ DIELECTRIC/METAL BARRIER INTEGRATION TO PREVENT COPPER DIFFUSION
/ DIELECTRIC/METAL BARRIER INTEGRATION TO PREVENT COPPER DIFFUSION
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机译:/介质/金属屏障整合以防止铜扩散
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摘要
An interconnect structure for use in semiconductor devices and a method for manufacturing the same are described. The method includes placing a substrate in a vacuum processing chamber. The substrate has an exposed copper surface and an exposed low-k dielectric surface. A metal layer is formed over the copper surface, but not over the low-k dielectric surface. A metal-based dielectric layer is formed over the metal layer and the low-k dielectric layer.
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