首页> 中文期刊> 《化工学报》 >CHEMICAL VAPOR DEPOSITION OF DIFFUSION BARRIERS FOR ADVANCED METALLIZATION

CHEMICAL VAPOR DEPOSITION OF DIFFUSION BARRIERS FOR ADVANCED METALLIZATION

         

摘要

IntroductionWhen Jack Kilby of Texas instrUmentS built theworld's first integrated circuit in 1958, the devicecontains only one transistOr Since then, integratedcircuitS have enjoyed tmpendous success in bothtechnology and business. The number of 'transistors oneach chip has been growing continuously due to theshrinking of device features. Todayl an advancedintegrated circuit device can Pack hundreds ofmillions transistors. TO connect these resistorstogether tO become a functioning chip is getting moreand m...

著录项

  • 来源
    《化工学报》 |2000年第s1期|P.|共5页
  • 作者

  • 作者单位
  • 原文格式 PDF
  • 正文语种 CHI
  • 中图分类 电镀工业;
  • 关键词

相似文献

  • 中文文献
  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号