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Dielectric/metal barrier integration to prevent copper diffusion
Dielectric/metal barrier integration to prevent copper diffusion
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机译:介电/金属势垒集成以防止铜扩散
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摘要
An interconnect structure for use in semiconductor devices and a method for fabricating the same is described. The method includes positioning a substrate in a vacuum processing chamber. The substrate has an exposed copper surface and an exposed low-k dielectric surface. A metal layer is formed over the copper surface but not over the low-k dielectric surface. A metal-based dielectric layer is formed over the metal layer and the low-k dielectric layer.
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