FIELD: chemistry.;SUBSTANCE: invention relates to sublimation growing of epitaxial arrays of self-organised monocrystalline nanoislands of silico on sapphire substrates and can be used in both nanotechnological process, characterised by high stability of formation of uniform-size nanoislands of silicon with low degree of defectiveness of their structure. Method of forming epitaxial array of monocrystalline silicon nanoislands on a sapphire substrate in a vacuum, including annealing a Sapphire substrate in a vacuum chamber, heating a silicon source by passing an electric current through it and growing on heated sapphire substrate an array of monocrystalline silicon nanoislands by self-organised formation of nanoislands on surface sapphire substrate from deposited atomic silicon, annealing of sapphire substrate is carried out at 1,200 °C, and evaporated atomic silicon stream is deposited on sapphire substrate, heated to temperature T, selected from an interval of its values of 550-700 °C, with growth rate of atomic layers of silicon V, selected depending on distance between evaporated surface of silicon source and surface of growth of sapphire substrate and substrate heating temperature.;EFFECT: invention provides stable reduction of defectiveness of sublimation-formed uniform-size nanoislands of silicon on a sapphire substrate.;4 cl, 2 dwg, 1 tbl
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