A method for producing a hollow space in a monocrystalline silicon substrate and semiconductor device having a cavity in a monocrystalline silicon substrate with an epitaxial layer

摘要

It is a method and a semiconductor device with a cavity is described, wherein a cavity is introduced into a monocrystalline silicon substrate, the wall of the cavity is covered with a cover layer and then with a selective epitaxial growing method a covering layer on the surface of the silicon substrate is applied and is covered in this case, the cavity. The method described is of simple design and inexpensive to carry out. In particular, the method described may be used for the purpose in the manufacture of a dram - memory a trench in front of high temperature processes to be covered and, according to the high temperature processes to be opened again and as a trench capacitor, to produce.