首页> 外国专利> BISMUTH GERMANIUM OXIDE SPUTTERING TARGET AND BISMUTH GERMANIUM OXIDE LAYER

BISMUTH GERMANIUM OXIDE SPUTTERING TARGET AND BISMUTH GERMANIUM OXIDE LAYER

机译:铋氧化锗溅射靶和铋氧化锗层

摘要

PROBLEM TO BE SOLVED: To provide a bismuth germanium oxide (BGO) sputtering target for optical recording media, having bending strength more excellent than before, and a BGO layer.SOLUTION: The BGO sputtering target includes Bi atoms, germanium atoms and O atoms and has 0.4-0.57 of a ratio of Bi atoms to the total of Bi atoms and germanium atoms. A crystal structure has BiGeO, BiGeOor a combination thereof and further, preferably, includes C, Si, Sn, Pb, Ti, Zr, Ce, Th or combinations thereof. The bending strength is, preferably, 45 MPa or more.SELECTED DRAWING: None
机译:解决的问题:提供用于光学记录介质的具有比以前更好的弯曲强度的氧化铋锗(BGO)溅射靶和BGO层。解决方案:BGO溅射靶包括Bi原子,锗原子和O原子,以及具有0.4-0.57的Bi原子与Bi原子和锗原子的总量之比。晶体结构具有BiGeO,BiGeO或它们的组合,并且进一步优选地包括C,Si,Sn,Pb,Ti,Zr,Ce,Th或它们的组合。弯曲强度优选为45MPa以上。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号