PATTERN FORMATION METHOD, PATTERN, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANKS PROVIDED WITH ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR MANUFACTURING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING MOLD FOR NANOIMPRINT, AND MOLD FOR NANOIMPRINT

摘要

Provided is a pattern formation method comprising: a step in which an active-ray-sensitive or radiation-sensitive film is formed by applying an active-ray-sensitive or radiation-sensitive resin composition to a substrate; a step in which the active-ray-sensitive or radiation-sensitive film is exposed; and a step in which the exposed active-ray-sensitive or radiation-sensitive film is developed after exposure using an alkali development solution. Provided is the pattern forming method, wherein the active-ray-sensitive or radiation-sensitive resin composition includes (A) a high-molecular-weight compound that contains repeated units expressed by formula (I), and the concentration of the alkali constituent in the alkali development solution is 1.25-2.2% by mass.