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Formation of SiC MOSFET with a high channel mobility by treating the oxide interface with cesium ions
Formation of SiC MOSFET with a high channel mobility by treating the oxide interface with cesium ions
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机译:通过用铯离子处理氧化物界面形成具有高沟道迁移率的SiC MOSFET
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摘要
Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased inversion layer mobility.
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