LASER ANNEALING METHOD, LASER ANNEALING DEVICE, AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR

摘要

The present invention is a laser annealing method for irradiating an amorphous silicon thin film 7 bonded to a substrate (5) with laser light L to form polysilicon, wherein multiple irradiation is carried out by changing the region on the amorphous silicon thin film 7 on which the laser light L is irradiated, and a grain diameter distribution is produced such that the crystal grain diameter of the polysilicon decreases from a central part toward a side-end part along at least the central axis C of the region on which the laser light L is irradiated. This makes it possible to realize a laser annealing method in which it is possible to reduce leakage current using a simple process.