THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR, AND LASER ANNEALING DEVICE

摘要

The present invention is a thin-film transistor provided with a gate electrode 1, a source electrode 3, a drain electrode 4, and a semiconductor layer 2 stacked on a substrate 5, wherein the semiconductor layer 2 is a polysilicon thin film 8, and the crystal grain size of the polysilicon thin film 8 in areas corresponding to the source electrode 3 and the drain electrode 4 is smaller than the crystal grain size of the polysilicon thin film 8 in a channel area 10 between the source electrode 3 and the drain electrode 4.