THIN-FILM TRANSISTOR METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR AND LASER ANNEALING DEVICE

摘要

The present invention is a thin film transistor having a gate electrode (1), a source electrode (3), a drain electrode (4) and a semiconductor layer (2) laminated on a substrate (5) (8), and the crystal grain size of the polysilicon thin film (8) in regions corresponding to the source electrode (3) and the drain electrode (4) Is smaller than the crystal grain size of the polysilicon thin film (8) in the region (10).