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Semiconductor device and an integrated circuit comprising an ESD protection device, ESD protection devices and a method of manufacturing the semiconductor device
Semiconductor device and an integrated circuit comprising an ESD protection device, ESD protection devices and a method of manufacturing the semiconductor device
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机译:半导体器件和包括ESD保护器件的集成电路,ESD保护器件以及制造该半导体器件的方法
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摘要
A semiconductor device is provided which comprises an ESD protection device. The structure of the semiconductor device comprises a p-doped isolated region in which a structure is manufactured which operates as a Silicon Controlled Rectifier which is coupled between an I/O pad and a reference voltage or ground voltage. The semiconductor device also comprises a pnp transistor which is coupled parallel to the Silicon Controlled Rectifier. The base of the transistor is coupled to the gate of the Silicon Controlled Rectifier. In an optional embodiment, the base and gate are also coupled to the I/O pad.
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