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Electrostatic discharge (ESD) protection transistor devices and integrated circuits with electrostatic discharge protection transistor devices
Electrostatic discharge (ESD) protection transistor devices and integrated circuits with electrostatic discharge protection transistor devices
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机译:静电放电(ESD)保护晶体管器件以及具有静电放电保护晶体管器件的集成电路
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摘要
An electro-static discharge (ESD) protection transistor device includes a plurality of transistor gates that extend parallel to one another in a first direction and a plurality of source/drain diffusion areas that extend parallel to one another in a second direction perpendicular to the first direction. Each source/drain diffusion area comprises a plurality of source/drain areas disposed between respective ones of the plurality of transistor gates. The ESD protection transistor device further includes a source contact positioned over each source area of the plurality of source areas and a drain contact positioned over each drain area of the plurality of drain areas. With respect to each source/drain diffusion area of the plurality of source/drain diffusion areas, the source contacts are offset from the drain contacts with respect to the first direction.
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