Electrostatic discharge protection device of a semiconductor integrated circuit, electrostatic discharge protection circuit using the manufacturing method and the electrostatic discharge protection device

摘要

PPROBLEM TO BE SOLVED: To provide an electrostatic discharge protection device for semiconductor integrated circuit which can be formed without adding any special step nor photomask to a manufacturing step even when a silicide step is employed, to provide a method for producing the same, and to provide an electrostatic discharge protection circuit using the electrostatic discharge protection device. PSOLUTION: The electrostatic discharge protection device includes: a thyristor; and a trigger diode A for triggering the thyristor into an on state with a low voltage. The diode A includes: an n-type cathode high impurity concentration region 9; a p-type anode high impurity concentration region 8; a gate oxide film 13 formed between the regions 9 and 8 for providing a gate of a MOS transistor of the semiconductor integrated circuit; a polysilicon 14 layered on the oxide film 13; and a gate sidewall insulator 12 provided on a sidewall of the oxide film 13 and a sidewall of the polysilicon 14 for electrically insulating the silicide layer formed on the surface of the region 9 from the silicide layer formed on the surface of the region 8. PCOPYRIGHT: (C)2009,JPO&INPIT