首页> 外国专利> Ag Ag Ag Ag Ag ALLOY SPUTTERING TARGET MANUFACTURING METHOD FOR Ag ALLOY SPUTTERING TARGET Ag ALLOY FILM AND MANUFACTURING METHOD FOR ALLOY FILM

Ag Ag Ag Ag Ag ALLOY SPUTTERING TARGET MANUFACTURING METHOD FOR Ag ALLOY SPUTTERING TARGET Ag ALLOY FILM AND MANUFACTURING METHOD FOR ALLOY FILM

机译:Ag Ag Ag Ag Ag合金溅射靶材的制备方法Ag合金膜及其制备方法

摘要

The Ag alloy sputtering target of the present invention has a composition containing Sn at not less than 0.1 at% and not more than 3.0 at%, Cu at not less than 1.0 at% and not more than 10.0 at%, and the balance of Ag and inevitable impurities. In addition, the Ag alloy film of the present invention has a composition containing Sn at not less than 0.1 at% and not more than 3.0 at%, Cu at not less than 1.0 at% and not more than 10.0 at%, and the balance of Ag and inevitable impurities.
机译:本发明的Ag合金溅射靶具有以下组成:含有不小于0.1at%且不大于3.0at%的Sn,不小于1.0at%且不大于10.0at%的Cu。和不可避免的杂质。另外,本发明的Ag合金膜的组成为:Sn为0.1at%以上且3.0at%以下,Cu为1.0at%以上且10.0at%以下。银和不可避免的杂质。

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