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Deposition of highly c-axis-oriented ScAlN thin films by RF magnetron sputtering using a Sc-Al alloy target

机译:使用Sc-Al合金靶通过RF磁控溅射沉积高c轴取向的ScAlN薄膜

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High-Sc-content ScAlN thin films have attracted significant attention because of their strong piezoelectricity. Instead of a co-sputtering system, a conventional RF-magnetron sputtering system was employed using a Sc-Al alloy metal target for deposition of ScAlN thin films. Highly c-axis-oriented ScAlN thin films with a Sc concentration of 32 at.% were obtained. We also demonstrate that a one-port surface acoustic wave (SAW) resonator based on the ScAlN/Si structure has a K2 value of 1.7% at 2 GHz, which is four times larger than that of the AlN/Si structure.
机译:高Sc含量的ScAlN薄膜由于其强大的压电性而引起了广泛的关注。代替共溅射系统,使用常规的RF磁控溅射系统,其使用Sc-Al合金金属靶来沉积ScAlN薄膜。获得具有32原子%的Sc浓度的高c轴取向的ScAlN薄膜。我们还证明,基于ScAlN / Si结构的单端口表面声波(SAW)谐振器在2 GHz时的K2值为1.7%,这是AlN / Si结构的四倍。

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