FTO THIN FILM PREPARATION USING MAGNETRON SPUTTERING DEPOSITION WITH PURE TIN TARGET

摘要

A fluorine-doped tin oxide (FTO) film preparation method includes the step of using a high purity tin ingot in a magnetron sputtering deposition as a target material, the step of applying argon (Ar) as a working gas to generate plasma for removing impurities from the tin target in increasing the purity of the tin target, and the step of applying reactive gases containing F atoms (CF₄) and oxygen (O₂) for enabling tetrafluoromethane (CF₄) to be dissociated by the generated plasma into fluorine ions and excited fluorine atoms for deposition with tin ions from the tin target on a substrate to form a thin film of fluorine-doped tin oxide on the substrate.