PROBLEM TO BE SOLVED: To provide a method for producing a fluorine-doped tin oxide thin film utilizing a magnetron sputtering method with a pure tin target material.;SOLUTION: With high purity tin as a target material in magnetron sputtering, reaction gas carbon tetrafluoride (CF4) and oxygen (O2) are introduced in the production process of magnetron sputtering. In the carbon tetrafluoride (CF4), plasma excited by a working gas separates fluoride (F) ions and fluoride (F) excited state atoms to form a fluorine-doped tin oxide thin film on a substrate together with the tin target material. Thus, production cost can be reduced, and the quality of the fluorine-doped tin oxide thin film can be improved.;COPYRIGHT: (C)2013,JPO&INPIT
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