首页> 外国专利> METHOD FOR PRODUCING FLUORINE-DOPED TIN OXIDE THIN FILM UTILIZING MAGNETRON SPUTTERING METHOD WITH PURE TIN TARGET MATERIAL

METHOD FOR PRODUCING FLUORINE-DOPED TIN OXIDE THIN FILM UTILIZING MAGNETRON SPUTTERING METHOD WITH PURE TIN TARGET MATERIAL

机译:纯锡靶材料的掺氟氧化锡薄膜的制备及利用磁控溅射法的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a fluorine-doped tin oxide thin film utilizing a magnetron sputtering method with a pure tin target material.;SOLUTION: With high purity tin as a target material in magnetron sputtering, reaction gas carbon tetrafluoride (CF4) and oxygen (O2) are introduced in the production process of magnetron sputtering. In the carbon tetrafluoride (CF4), plasma excited by a working gas separates fluoride (F) ions and fluoride (F) excited state atoms to form a fluorine-doped tin oxide thin film on a substrate together with the tin target material. Thus, production cost can be reduced, and the quality of the fluorine-doped tin oxide thin film can be improved.;COPYRIGHT: (C)2013,JPO&INPIT
机译:要解决的问题:提供一种利用磁控溅射法和纯锡靶材制造氟掺杂的氧化锡薄膜的方法;解决方案:在磁控溅射中以高纯锡为靶材,反应气体四氟化碳磁控溅射生产过程中引入了CF 4 和氧气(O 2 )。在四氟化碳(CF 4 )中,通过工作气体激发的等离子体将氟化物(F)离子和氟化物(F)激发态原子分离,从而在基板上一起形成掺氟的氧化锡薄膜与锡靶材料。因此,可以降低生产成本,并可以改善掺氟氧化锡薄膜的质量。;版权所有:(C)2013,日本特许厅&INPIT

著录项

  • 公开/公告号JP2013060632A

    专利类型

  • 公开/公告日2013-04-04

    原文格式PDF

  • 申请/专利权人 NATIONAL CENTRAL UNIV;

    申请/专利号JP20110200101

  • 申请日2011-09-14

  • 分类号C23C14/34;H01B13/00;

  • 国家 JP

  • 入库时间 2022-08-21 16:57:49

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