Fluorine-doped tin oxide films grown by pulsed direct current magnetron sputtering with an Sn target

摘要

Fluorine-doped tin oxide (FTO) films have been deposited by pulsed DC magnetron sputtering with an Sn target. Various ratios of CF_(4)/O_(2) gas were injected to enhance the optical and electrical properties of the films. The extinction coefficient was lower than 1.5 X 10~(-3) in the range from 400 to 800 nm when the CF_(4)/O_(2) ratio was 0.375. The resistivity of fluorine-doped SnO_(2) films (1.63 X 10~(-3) (OMEGA)cm) deposited at 300 deg C was 27.9 times smaller than that of undoped SnO_(2) (4.55 X 10~(-2) (OMEGA)cm). Finally, an FTO film was consecutively deposited for protecting the oxidation of indium tin oxide films. The resistivity of the double-layered film was 2.68 X 10~(-4) (OMEGA)cm, which increased by less than 39percent at a 450 deg C annealing temperature for 1 h in air.