机译:直流反应磁控溅射沉积在Si(100)衬底上的ScAlN(002)合金薄膜的制备
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China;
机译:直流反应磁控溅射在硅和柔性基板上制备ScAlN薄膜作为功率密度的函数
机译:直流磁控溅射沉积在(100)SrTiO_3衬底上的La_(1.85)Sr_(0.15)CuO_(4 +δ)薄膜的形态和结构
机译:反应直流磁控溅射沉积在各种基材上的氮化碳薄膜的特性
机译:通过直流反应磁控溅射和高功率脉冲磁控溅射(Hipims),织地织地织地造成的ALN薄膜的生长沉积在Si(100)上沉积在Si(100)上
机译:通过反应磁控溅射沉积的亚稳态钛(0.5)铝(0.5)铝合金薄膜的物理性能。
机译:在不加热衬底的情况下通过射频磁控等离子体溅射沉积的铝掺杂氧化锌薄膜的空间分辨光电性能
机译:压力对Si(100)基材的DC反应磁控溅射沉积的ALN性能的影响