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HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
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机译:具有不均匀的横向二维电子气轮廓的HEMT GaN器件及其制造方法
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摘要
A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.
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