Optimization of two-dimensional electron gases and Ⅰ-Ⅴ characteristics for AlGaN/GaN HEMT devices

摘要

In this paper, we take account of the spontaneous and piezoelectric polarization effect at the heterointerface in the AlGaN/GaN HEMT device, and one-dimensional Schroedinger-Poisson equations are solved self-consistently using a nonuniform mesh; using our findings, the AlGaN/GaN heterostructure conduction band and the two-dimensional electron gas (2DEG) density are investigated. The dependences of the 2DEG characteristics on the Al fraction, the thickness of each layer, the donor concentration and the gate voltage are investigated through simulation. The output characteristics are simulated using a quasi-2D model; a saturation voltage and threshold voltage are also shown. The influence of the spacer layer width on the 2DEG density is calculated for the first time. An explanation and analyses are given.