MAGNETIC WALL UTILIZATION TYPE ANALOG MEMORY DEVICE, MAGNETIC WALL UTILIZATION TYPE ANALOG MEMORY, NONVOLATILE LOGIC CIRCUIT, AND MAGNETIC NEURO DEVICE

摘要

A magnetic wall utilization type analog memory device includes a magnetization fixed layer having a magnetization oriented in a first direction, a non-magnetic layer provided on one side of the magnetization fixed layer, a magnetic wall driving layer provided on the magnetization fixed layer with the non-magnetic layer interposed therebetween, a first magnetization supplying part which is configured to supply magnetization oriented in the first direction to the magnetic wall driving layer and a second magnetization supplying part which is configured to supply magnetization oriented in a second direction reversed with respect to the first direction, wherein at least one of the first magnetization supplying part and the second magnetization supplying part is a spin-orbit torque wiring which comes into contact with the magnetic wall driving layer and extends in a direction intersecting the magnetic wall driving layer.