Spintronic logic circuit and device prototypes utilizing domain walls in ferromagnetic wires with tunnel junction readout

摘要

We present a prototype of a switch that encodes information in the position of a magnetic domain wall (DW) in a ferromagnetic wire. The information is written using spin transfer torque and/or spin hall effect and read out using a magnetic tunnel junction (MTJ). We build prototypes and show that a single three-terminal device can perform buffer/inverter operations, which can be used as AND/NAND gates. We demonstrate one device can drive two subsequent gates, and we show bit propagation in a circuit of three inverters.