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Methods of manufacturing fin field effect transistors (FinFETs) comprising reduced gate thicknesses overlying deep trenches
Methods of manufacturing fin field effect transistors (FinFETs) comprising reduced gate thicknesses overlying deep trenches
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机译:制造鳍式场效应晶体管(FinFET)的方法,该方法包括在深沟槽上覆盖的减小的栅极厚度
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摘要
An IC device includes a substrate including a device region having a fin-type active region and a deep trench region; a gate line that extends in a direction intersecting the fin-type active region; and an inter-device isolation layer that fills the deep trench region. The gate line includes a first gate portion that extends on the device region to cover the fin-type active region and has a flat upper surface at a first level and a second gate portion that extends on the deep trench region to cover the inter-device isolation layer while being integrally connected to the first gate portion and has an upper surface at a second level that is closer to the substrate than the first level.
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