首页> 外文OA文献 >Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm

【2h】

Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm

机译：辐射敏感场效应晶体管的辐射和自发退火，栅极氧化物厚度为400和1000nm

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Goran S. Ristic; Marko S. Andjelković; Russell Duane; Alberto J. Palma; Aleksandar B. Jakšić;
展开▼
作者单位

展开▼
年度 2021
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm [J] . Goran S. Ristic, Marko S. Andjelkovic, Russell Duane, Sensors and materials . 2021,第6期

机译：辐射敏感场效应晶体管的辐射和自发退火，栅极氧化物厚度为400和1000nm
2. Electron mobility improvement by in situ annealing before deposition of HfO_2 gate dielectric with equivalent oxide thickness of sub-1.0nm in In_(0.53)Ga_(0.47)As n-type metal-insulator-semiconductor field-effect transistor [J] . Minoru Oda, Toshifumi Irisawa, Wipakorn Jevasuwan, _Applied Physics Express . 2014,第6期

机译：通过在In_（0.53）Ga_（0.47）As n型金属-绝缘体-半导体场效应晶体管中沉积等效氧化膜厚度小于1.0nm的HfO_2栅极电介质之前通过原位退火提高电子迁移率
3. Reliability of Strained SiGe Channel p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ultra-Thin (EOT = 3.1 nm) N_2O-Annealed SiN Gate Dielectric [J] . Ching-Wei Chen, Chao-Hsin Chien, Yi-Cheng Chen, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2005,第6A期

机译：具有超薄（EOT = 3.1 nm）N_2O退火的SiN栅极介电层的应变SiGe沟道p沟道金属氧化物半导体场效应晶体管的可靠性
4. Excitation of gated and ungated plasmons and generation of terahertz radiation in nanometer-gate field-effect transistor [C] . Polischuk, O.V., Popov, . 2005

机译：纳米门场效应晶体管中门和非门等离子体激元的激发和太赫兹辐射的产生
5. An electrolyte gated carbon nanotube field-effect transistor device [D] . Tu, Khanh Van. 2014

机译：电解质门控碳纳米管场效应晶体管装置
6. Passive radiofrequency x-ray dosimeter tag based on flexible radiation-sensitive oxide field-effect transistor [O] . Tobias Cramer, Ilaria Fratelli, Pedro Barquinha, 2018

机译：基于柔性辐射敏感氧化物场效应晶体管的无源射频X射线剂量计标签
7. Fabrication Method of Sub-100 nm Metal-Oxide-Semiconductor Field-Effect Transistor with Thick Gate Oxide [O] . Singh, Vipul, Inokawa, Hiroshi, Endoh, Tetsuo, 2010

机译：厚栅极氧化物的100nm以下金属氧化物半导体场效应晶体管的制备方法

Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm

著录项

引文网络

相似文献

相关主题

期刊订阅