机译:接地平面鳍形场效应晶体管(GP-FinFET):一种用于低泄漏功率电路的FinFET
Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran;
Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran;
School of Electrical and Computer Engineering, Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, United States;
FinFET; DIBL; ground plane; process variation; TDF; ARAM cell;
机译:控制20nm级四端绝缘体上硅鳍形场效应晶体管的低待机功率操作,通过控制栅极下重叠长度来最小化栅极感应的漏漏
机译:集成睡眠和通过晶体管逻辑以减少FinFET电路中的泄漏功率
机译:具有P型数据访问晶体管的稳健FinFET存储电路,可实现更高的集成密度和更低的泄漏功率
机译:具有P型数据访问晶体管的紧凑型FinFET存储器电路,用于低泄漏和鲁棒操作
机译:混合单电子和场效应晶体管电路的建模与仿真未来低功率纳米电子学
机译:高性能和低功耗单片三维3μm以下50微米多晶硅薄膜晶体管(TFT)电路
机译:用于低泄漏功率外围电路的新型睡眠晶体管技术