MICRO-ELECTRONIC DEVICES AND METHODS FOR IMPROVING INTERCONNECTION RELIABILITY PERFORMANCE USING TUNGSTEN CONTAINER LAYERS TO ALLOW COBALT INTERCONNECTIONS

摘要

Embodiments of the invention include a microelectronic device including a substrate having a layer of dielectric material that includes a leveling element, a tungsten-containing barrier coating layer formed on the leveling element, and a cobalt conductive layer deposited on the coating layer. containing tungsten barrier in the element unevenness. The tungsten-containing barrier coating layer provides adhesion to the cobalt conductive layer.