MICROELECTRONIC DEVICES AND METHODS FOR ENHANCING INTERCONNECT RELIABILITY PERFORMANCE USING TUNGSTEN CONTAINING ADHESION LAYERS TO ENABLE COBALT INTERCONNECTS

摘要

Embodiments of the invention include a microelectronic device that includes a substrate having a layer of dielectric material that includes a feature with a depression, a Tungsten containing barrier liner layer formed in the depression of the feature, and a Cobalt conductive layer deposited on the Tungsten containing barrier liner layer in the depression of the feature. The Tungsten containing barrier liner layer provides adhesion for the Cobalt conductive layer.