MOSFET LOGIC CELL FORMED OF A RADIANT MOSFETMETAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

Provided is a logic cell formed of at least one metal oxide semiconductor field effect transistor (MOSFET), comprising: an I-gate N-type MOSFET in which an N+ layer, and a plurality of P+ layers formed at both side surfaces of the N+ layer or around an upper and a lower side surface of the N+ layer are included, a plurality of I-gates physically separating each of the P+ layers from the N+ layer are included, a P-active layer formed on the P+ layer is extended to a portion of the N+ layer, and an N-active layer is formed on the N+ active layer to be adjacent to the extended P-active layer; and at least one commercial P-type MOSFET adjacent to the I-gate N-type MOSFET. A size of the N-active layer of the I-gate N-type MOSFET is formed to be identical to that of the commercial N-type MOSFET such that the logic cell has the same channel size with the commercial logic cell.