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MOSFET Super junction MOSFETMetal Oxide Semiconductor Field Effect Transistor and method of the super junction MOSFET

机译:MOSFET超级结MOSFET金属氧化物半导体场效应晶体管和超级结MOSFET的方法

摘要

The super-junction MOSFET includes a substrate of a first conductivity type, an epitaxial layer of a first conductivity type positioned on the substrate, and a filler of a second conductivity type that extends vertically to the epitaxial layer and is spaced apart from each other by a predetermined interval. And, a first well of a second conductivity type, each connected to an upper end of the pillars in the epitaxial layer and extending to an upper surface of the epitaxial layer, and a second well of a first conductivity type positioned in the first well Wells and a plurality of gate structures disposed on the epitaxial layer and having a stripe shape extending in one direction and spaced apart from each other are included. Accordingly, since the areas of the gate structures are relatively small, the input capacitance of the super junction MOSFET can be reduced.
机译:该超结MOSFET包括:第一导电类型的衬底;位于该衬底上的第一导电类型的外延层;和垂直于该外延层延伸并且彼此间隔开的第二导电类型的填充物。预定的间隔。并且,第二导电类型的第一阱,其分别连接至外延层中的柱的上端并延伸至外延层的上表面,以及第二导电类型的第二阱,其位于第一阱中包括设置在外延层上并具有在一个方向上延伸并且彼此间隔开的带状的多个栅极结构。因此,由于栅极结构的面积相对较小,所以可以减小超结MOSFET的输入电容。

著录项

  • 公开/公告号KR102159418B1

    专利类型

  • 公开/公告日2020-09-23

    原文格式PDF

  • 申请/专利权人 주식회사 디비하이텍;

    申请/专利号KR20160085308

  • 发明设计人 김영석;김범석;

    申请日2016-07-06

  • 分类号H01L29/06;H01L21/02;H01L29/78;H01L29/786;

  • 国家 KR

  • 入库时间 2022-08-21 11:03:44

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