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MOSFET Super junction MOSFETMetal Oxide Semiconductor Field Effect Transistor and method of the super junction MOSFET

机译:MOSFET超级结MOSFET金属氧化物半导体场效应晶体管和超级结MOSFET的方法

摘要

A super-junction MOSFET comprises: a substrate of a first conductivity type; an epitaxial layer of the first conductivity type positioned on the substrate; pillars of a second conductivity type vertically extended on the epitaxial layer and separated at regular intervals; a first well of the second conductivity type connected to upper ends of the pillars in the epitaxial layer, and extended to an upper surface of the epitaxial layer; second wells of the first conductivity type positioned within the first well; and a plurality of gate structures which are positioned on the epitaxial layer, have a stripe shape extended in one direction, and are separated from each other. Therefore, areas of the gate structures are relatively small to reduce input capacitance of the super-junction MOSFET.
机译:一种超结型MOSFET,包括:第一导电类型的衬底;以及第二衬底。位于基板上的第一导电类型的外延层;第二导电类型的柱在外延层上垂直延伸并以规则的间隔分开;第二导电类型的第一阱,其连接到外延层中的柱的上端,并延伸到外延层的上表面;第一导电类型的第二阱位于第一阱内;多个栅极结构位于外延层上,具有在一个方向上延伸的条纹形状,并且彼此分离。因此,栅极结构的面积相对较小以减小超结MOSFET的输入电容。

著录项

  • 公开/公告号KR20180005357A

    专利类型

  • 公开/公告日2018-01-16

    原文格式PDF

  • 申请/专利权人 DB HITEK CO. LTD.;

    申请/专利号KR20160085308

  • 发明设计人 KIM YOUNG SEOK;KIM BUM SEOK;

    申请日2016-07-06

  • 分类号H01L29/06;H01L21/02;H01L29/78;H01L29/786;

  • 国家 KR

  • 入库时间 2022-08-21 12:41:13

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