MOSFET LOGIC CELL FORMED OF A RADIANT MOSFETMETAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

A logic cell formed of at least one MOSFET (METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR), the logic cell comprising: an N + layer and a plurality of P + layers formed around both sides or top and bottom sides of the N + layer; A plurality of I-gates that physically isolate between a P + layer and the N + layer, wherein a P active layer formed on the P + layer extends to a portion of the N + layer and is adjacent to the extended P active layer; An I gate N-type MOSFET having an N active layer formed on the layer, and at least one commercial P-type MOSFET adjacent to the I gate N-type MOSFET, wherein the logic cell is formed of the I gate N-type MOSFET. The N active layer size of the commercial process is formed to be the same as the size of the N active layer of the N-type MOSFET of the commercial process, the logic cell channel size of the commercial process It characterized by having the same channel size.