SEMICONDUCTOR CIRCUIT USING POSITIVE FEEDBACK FIELD EFFECT TRANSISTOR FOR EMULATING NEURON FIRING PROCESS

摘要

The present invention uses positive feedback transistors having first and second gate electrodes in the channel length direction, and the first gate electrode is connected to the gate electrode of the first p-channel MOSFET as an input terminal, and the second gate electrode is supplied with a supply voltage. By being connected to the drain to be applied, the electrons and holes (holes) are divided and accumulated in the lower channel region (body) of each gate electrode by the input signal applied to the input terminal, the current only when the instant is the ignition of the neuron Flows off and on, dramatically reducing the power dissipated when neurons do not ignite, mimic neuron firing behavior using positive feedback transistors driven at low power and with the same endurance as a typical MOSFET. Provide a semiconductor circuit.