SiC wafer error measurement method, reference sample and method for producing an epitaxial SiC wafer

摘要

An SiC wafer defect measuring method according to the present invention comprises a device treatment step for treating an error measurement device by irradiating a reference sample of a material having a light emission intensity that does not change upon repeated irradiation with excitation light, which pattern is formed by recesses formed in the surface and / or. or projections, wherein the irradiation with the excitation light is performed before the measurement of defects in a SiC wafer and under the same irradiation conditions as in the measurement of the defects in the SiC wafer, and then the signal-to-noise ratio of the pattern based on a reflection image the pattern is measured.