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Excess Carrier Lifetimes in a Bulk p-type SiC Wafer Measured by the Microwave Photoconductivity Decay Method

机译：用微波光电导衰减法测量大块p型siC晶片中的过剩载流子寿命

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Masahiko Kawai; Tatsuhiro Mori; Masashi Kato; Masaya Ichimura; Shingo Sumie; Hidehisa Hashizume;
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1. Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method [J] . Hideki Watanabe, Masashi Kato, Masaya Ichimura, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第1期

机译：微波光导衰减法测量等离子刻蚀GaN的超载子寿命
2. Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution [J] . Tatsuhiro MORI, Masashi KATO, Hideki WATANABE, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第12期

机译：散装SiC晶片的载流子寿命的测量及其与结构缺陷的关系。
3. A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers [J] . EDWARD VAN BRUNT, ANANT AGARWAL, AL BURK, Journal of Electronic Materials . 2014,第4期

机译：延长寿命的4H-SiC外延层的微波光电导衰减和开路电压衰减寿命测量技术的比较
4. Excess Carrier Lifetimes in a Bulk p-type SiC Wafer Measured by the Microwave Photoconductivity Decay Method [C] . Masahiko Kawai, Tatsuhiro Mori, Masashi Kato, European Conference on Silicon Carbide and Related Materials . 2007

机译：通过微波光电导衰减法测量的散装P型SiC晶片中的多余载体寿命
5. Photoconductivity in bulk and nanocrystalline semiconductors measured with time-resolved terahertz spectroscopy. [D] . Turner, Gordon Meredith. 2003

机译：用时间分辨太赫兹光谱法测量了块状和纳米晶体半导体的光电导性。
6. Extended carrier lifetimes and diffusion in hybrid perovskites revealed by Hall effect and photoconductivity measurements [O] . Y. Chen, H. T. Yi, X. Wu, -1

机译：霍尔效应和光电导率测量表明杂化钙钛矿中的载流子寿命延长和扩散
7. A Comparison of the Microwave Photoconductivity Decay and Open-Circuit Voltage Decay Lifetime Measurement Techniques for Lifetime-Enhanced 4H-SiC Epilayers [O] . Edward Van Brunt, Anant Agarwal, Al Burk, 2013

机译：微波光电导衰减和开路电压衰减寿命测量技术对寿命增强的4H-SiC脱床的比较
8. Carrier Lifetime Measurement by the Photoconductive Decay Method. [R] . Mattis, R. L., Baroody, A. J. 1972

机译：光电导衰减法测量载流子寿命。

Excess Carrier Lifetimes in a Bulk p-type SiC Wafer Measured by the Microwave Photoconductivity Decay Method

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