SiC WAFER DEFECT MEASURING METHOD, REFERENCE SAMPLE, AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER

摘要

This SiC wafer defect measuring method has a device management step for managing a defect measuring device by: irradiating a reference sample which is made of a material having a light-emitting intensity that does not change with repeated irradiation by excitation light and which has a pattern made of recesses and/or protrusions in the surface thereof, such irradiation performed with the excitation light, prior to measuring defects of a SiC wafer, and under irradiation conditions identical to those during measuring of the SiC wafer; and measuring the S/N ratio of the pattern from the reflection image of the pattern.