METHOD FOR MEASURING DEFECT OF SiC WAFER, REFERENCE SAMPLE AND METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a method for measuring defects of a SiC wafer, capable of measuring defects by a photo luminescence device in the state of maintaining high accuracy.SOLUTION: The method for measuring defects of a SiC wafer includes the device control step of controlling a defect measuring device by irradiating with excitation light on the same irradiation conditions as the measurement before measuring the defects of the SiC wafer, a reference sample consisting of a material without changing light emission intensity by irradiation repeated by excitation light and having a pattern constituted of a depression and/or a projection on the surface to measure the S/N ratio of the pattern from the reflected image of the pattern.SELECTED DRAWING: Figure 3