Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations

摘要

A material processing apparatus has an Atomic Layer Deposition reaction chamber 705 including a substrate support 715 for supporting a substrate wherein the ALD reaction chamber is operable to carry out a deposition process that includes depositing a material coating layer onto a coating surface wherein the deposition process is carried out at a deposition temperature ranging between 80 and 800 degC and at a reaction chamber internal pressure ranging between 1 and 500 mTorr, a process gas module 720 operable to deliver doses of process gases into the reaction chamber; an exhaust system for removing process gases; a laser annealing module operable to perform in-situ laser annealing of the coating surface; and a controller 730 operable to carry out ALD material deposition cycles and to carry out laser annealing of the material layer.