Intentional contamination method for semiconductor wafers

摘要

PROBLEM TO BE SOLVED: To provide a method for intentionally contaminating a desired metal element in a limited local region of a wafer by controlling it to a desired concentration with high accuracy. It is also an object to improve work efficiency as compared with the conventional method. SOLUTION: This is a method of intentionally contaminating a semiconductor wafer by intentionally introducing a desired metal element into a predetermined region on the surface of the semiconductor wafer in order to evaluate the performance of the semiconductor wafer, and a standard liquid containing the metal element is applied. A method for intentionally contaminating a semiconductor wafer, which comprises using a solution diluted with a solvent consisting of a volatile liquid as a contaminating solution and dropping a contaminated region at a predetermined position on the surface of the semiconductor wafer by dropping the solution at a predetermined position. [Selection diagram] Fig. 1