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首页> 外文期刊>IEEE Transactions on Semiconductor Manufacturing >Sweeping-TXRF: A Nondestructive Technique for the Entire Surface Characterization of Metal Contaminations on Semiconductor Wafers
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Sweeping-TXRF: A Nondestructive Technique for the Entire Surface Characterization of Metal Contaminations on Semiconductor Wafers

机译:扫描TXRF:半导体晶片上金属污染的整个表面表征的非破坏性技术

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摘要

We propose a new mode of total reflection X-ray fluorescence (TXRF) analysis called "Sweeping-TXRF" for the characterization of wafer surface contaminations in semiconductor manufacturing. Essentially, Sweeping-TXRF is the mapping of an entire surface with a very short data acquisition time for each individual spot. Sweeping-TXRF provides three-dimensional views for individual elements on a wafer in a very short period of time, a method that had never before been achieved by traditional methods. Dedicated software for this method was developed and tested, and the results are quite promising for routine contamination characterization.
机译:我们提出了一种称为“扫描-TXRF”的全反射X射线荧光(TXRF)分析新模式,用于表征半导体制造中的晶片表面污染。本质上,Sweeping-TXRF是整个表面的映射,每个点的数据采集时间都很短。扫掠TXRF可在很短的时间内为晶圆上的各个元素提供三维视图,这是传统方法从未实现的方法。开发并测试了用于此方法的专用软件,其结果对于常规的污染物表征非常有希望。

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